Abstract

Off-axis electron holography (EH) is a powerful method for mapping projected electric potentials, such as built-in potentials in semiconductor devices, in two dimensions (2D) at nanometer resolution. However, not well-defined thickness profiles, surface effects, and composition changes of the sample under investigation complicate the interpretation of the projected potentials. Here, we demonstrate how these problems can be overcome by combining EH with tomographic techniques, that is, electron holographic tomography (EHT), reconstructing electric potentials in 3D. We present EHT reconstructions of an n-type MOSFET including its dopant-related built-in potentials inside the device, as well as of a GaAs/AlGaAs core-multishell nanowire containing a 5 nm thick quantum well tube.

Autore Pugliese

• Lovergine Nicola

Tutti gli autori

• Wolf D. , Lubk A. , Prete P. , Lovergine N. , Lichte H.

Titolo volume/Rivista

JOURNAL OF PHYSICS D. APPLIED PHYSICS

Anno di pubblicazione

2016

ISSN

0022-3727

ISBN

Non Disponibile

Numero di citazioni Wos

1

Ultimo Aggiornamento Citazioni

28/04/2018

Numero di citazioni Scopus

1

Ultimo Aggiornamento Citazioni

28/04/2018

Settori ERC

Non Disponibile

Codici ASJC

Non Disponibile