“Thermal oxidation of amorphous GaSe thin films”

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Abstract

In this work the results of the thermal oxidation of GaSe thin films in air at different temperatures are presented. The structural and morphological characteristics of the thermally annealed products were studied by X-ray diffraction (XRD), Raman spectroscopy and scanning electron microscopy (SEM). The as-deposited GaSe films were amorphous and they transformed into polycrystalline GaSe films with a hexagonal crystal structure at a temperature around 400°C. Thermal oxidation at 650°C resulted in the formation of mixed Ga2Se3 and Ga2O3compounds both in the monoclinic phase. At higher temperatures, Ga2Se 3 disappeared and complete oxidation of the initial compound occurred. The optical energy gaps of products were determined at room temperature by transmittance measurements using UV-vis-NIR spectroscopy.

Autore Pugliese

Tutti gli autori

  • T. Siciliano , M. Tepore , A. Genga , , G. Micocci , M. Siciliano , A. Tepore

Titolo volume/Rivista

VACUUM

Anno di pubblicazione

2013

ISSN

0042-207X

ISBN

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Numero di citazioni Wos

Nessuna citazione

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Numero di citazioni Scopus

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Settori ERC

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Codici ASJC

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