TRENCH SIDEWALL CONTACT SCHOTTKY PHOTODIODE AND RELATED METHOD OF FABRICATION

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Abstract

A Schottky photodiode may include a monocrystalline semiconductor substrate having a front surface, a rear surface, and a first dopant concentration and configured to define a cathode of the Schottky photodiode, a doped epitaxial layer over the front surface of the monocrystalline semiconductor substrate having a second dopant concentration less than the first dopant concentration, and parallel spaced apart trenches in the doped epitaxial layer and having of a depth less than a depth of the doped epitaxial layer.; The Schottky photodiode may include a metal filler in the parallel spaced apart trenches to form a Schottky rectifying contact with the doped epitaxial layer, an anode current distributor metal layer on a surface of the doped epitaxial layer and in electrical contact with the metal filler of the parallel spaced apart trenches, a dielectric passivation layer on the anode current distributor metal layer, and a conductive metal layer over the rear surface of the monocrystalline semiconductor substrate and configured to provide an ohmic contact with the cathode.

Classe Tecnologica

H - Electricity

Patent Office

United States Patent and Trademark Office

Numero Deposito

US2010301445

Anno Deposito

2009

Anno Concessione

2010

Inventori Pugliesi

  • Mazzillo Massimo Cataldo

Tutti gli inventori

  • Mazzillo Massimo Cataldo

Titolari pugliesi

  • Non ci sono titolari pugliesi

Tutti i titolari

  • STMicroeletronics S.r.l.