Reading method of a memory device with embedded error-correcting code and memory device with embedded error-correcting code

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Abstract

A reading method for a memory device with error-correcting encoding envisages the steps of: carrying out a first reading of a plurality of memory locations (A 0 , A 1 , ..., A LS-1 ) to generate a first recovered string (S 1 ), and performing a first decoding attempt using the first recovered string (S 1 ). When the first decoding attempt fails, the memory locations are read at least one second time, and at least one second recovered string (S 2 -S N ) is generated. On the basis of a comparison between the first recovered string (S 1 ) and the second recovered string (S 2 -S N ), a modified string (S M ) is generated, in which erasures (X) are located, and at least one second decoding attempt is carried out using the modified string (S M ).

Classe Tecnologica

G - Physics

Patent Office

United States Patent and Trademark Office

Numero Deposito

US7908543

Anno Deposito

2007

Anno Concessione

2011

Inventori Pugliesi

  • Intini Valeria

Tutti gli inventori

  • Alessia Marelli
  • Valeria Intini
  • Roberto Ravasio
  • Rino Micheloni

Titolari pugliesi

  • Non ci sono titolari pugliesi

Tutti i titolari

  • Micorn Technology, Inc.