PROCESS FOR MANUFACTURING A POWER DEVICE WITH A TRENCH-GATE STRUCTURE AND CORRESPONDING DEVICE

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Abstract

An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate to make a first trench having first side walls and a first bottom; and further etching said semiconductor substrate to make a second trench inside the first trench, realized in a self-aligned way and below this first trench, the first trench and the second trench defining the trench-gate structure with a bird beak-like transition profile suitable for containing a gate region.

Classe Tecnologica

H - Electricity

Patent Office

United States Patent and Trademark Office

Numero Deposito

US2010230747

Anno Deposito

2009

Anno Concessione

2010

Inventori Pugliesi

  • Barletta Giacomo

Tutti gli inventori

  • Giacomo Barletta

Titolari pugliesi

  • Non ci sono titolari pugliesi

Tutti i titolari

  • STMicroeletronics S.r.l.