PATTERN DEPENDENT STRING RESISTANCE COMPENSATION

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Abstract

Pattern dependent string resistance compensation of a memory device is generally described. In one example, an electronic device includes a first string of memory cells and a first bit line coupled with the first string of memory cells wherein a memory cell of the first string of memory cells is read, in part, by pre-charging the first bit line through the first string of memory cells to compensate for resistance of unselected cells in the first string of memory cells.

Classe Tecnologica

G - Physics

Patent Office

United States Patent and Trademark Office

Numero Deposito

US2010027340

Anno Deposito

2008

Anno Concessione

2010

Inventori Pugliesi

  • Conenna Pasquale

Tutti gli inventori

  • Ercole Rosario Di Iorio
  • Pasquale Conenna

Titolari pugliesi

  • Conenna Pasquale

Tutti i titolari

  • Conenna Pasquale
  • Ercole Rosario Di Iorio