MULTI PIXEL PHOTO DETECTOR ARRAY OF GEIGER MODE AVALANCHE PHOTODIODES

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Abstract

A multi-pixel photodetector array may include a semiconductor substrate having a back side and a front side, Geiger mode avalanche photodiodes (GM-APDs) on the semiconductor substrate, each including an anode contact, and a common cathode for the GM-APDs and having a first connection lead on the backside of the semiconductor substrate. The multi-pixel photodetector array may include a second connection lead, and a common anode on the front side of the semiconductor substrate and configured to couple in common the anode contacts of the GM-APDs to the second connection lead. Each GM-APD may be configured to generate, when a photon impinges thereon, a current pulse of different shape for discrimination by an external circuit connected to the common cathode and the common anode.

Classe Tecnologica

H - Electricity

Patent Office

United States Patent and Trademark Office

Numero Deposito

US2012068050

Anno Deposito

2010

Anno Concessione

2012

Inventori Pugliesi

  • Mazzillo Massimo Cataldo

Tutti gli inventori

  • Massimo Cataldo Mazzillo
  • Delfo Nunziato Sanfilippo
  • Giovanni Condorelli

Titolari pugliesi

  • Non ci sono titolari pugliesi

Tutti i titolari

  • STMicroeletronics S.r.l.