GEIGER-MODE AVALANCHE PHOTODIODE WITH HIGH SIGNAL-TO-NOISE RATIO, AND CORRESPONDING MANUFACTURING PROCESS

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Abstract

An embodiment of a geiger-mode avalanche photodiode includes: a body of semiconductor material, having a first surface and a second surface; a cathode region of a first type of conductivity, which extends within the body; and an anode region of a second type of conductivity, which extends within the cathode region and faces the first surface, the anode and cathode regions defining a junction. The anode region includes at least two subregions, which extend at a distance apart within the cathode region starting from the first surface, and delimit at least one gap housing a portion of the cathode region, the maximum width of the gap and the levels of doping of the two subregions and of the cathode region being such that, by biasing the junction at a breakdown voltage, a first depleted region occupies completely the portion of the cathode region within the gap.

Classe Tecnologica

H - Electricity

Patent Office

United States Patent and Trademark Office

Numero Deposito

US2011241149

Anno Deposito

2010

Anno Concessione

2011

Inventori Pugliesi

  • Mazzillo Massimo Cataldo

Tutti gli inventori

  • Delfo Nunziato Sanfilippo
  • Massimo Cataldo Mazzillo

Titolari pugliesi

  • Non ci sono titolari pugliesi

Tutti i titolari

  • STMicroeletronics S.r.l.