Control circuit and method for driving a half-bridge circuit

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Abstract

The invention relates to method for controlling a first transistor (T1) in a half-bridge circuit which includes the first transistor (T1) and a second transistor (T2), each of which Transistors (T1, Z2) comprises a load path (D-S) and a control gate (G), whose load paths are connected in series, and for which the first transistor (T1) can be controlled by applying a first drive voltage (Vgs1) to its gate (G) and the second transistor (T2) can be controlled by applying a second drive voltage (Vgs2) to its gate (G), the method comprising the method steps: - during a switch-off operation of the second transistor (T2), comparison of the amplitude of the second drive voltage (Vgs2) with a first threshold value (Vth0) and a second threshold value (Vth1), - start of a switch-on operation for the second transistor (T2) after expiry of a specified first period (Tf) after a first time (t0) at which the second drive voltage undershoots the first threshold value (Vth0), - setting of the first threshold value (Vth0) in accordance with a second period (T) between a second time (t1), at which the amplitude of the second drive voltage (Vgs2) undershoots the second threshold value (Vth1), and with another time (t3) at which the first transistor adopts a specified initial operating state during the switch-on operation.

Classe Tecnologica

H - Electricity

Patent Office

United States Patent and Trademark Office

Numero Deposito

US7301376

Anno Deposito

2006

Anno Concessione

2007

Inventori Pugliesi

  • Florio Nicola

Tutti gli inventori

  • Giovanni Capodivacca
  • Nicola Florio
  • Maurizio Galvano

Titolari pugliesi

  • Non ci sono titolari pugliesi

Tutti i titolari

  • Infineon Technologies AG