SILICON INTEGRATED BIVALVE THERMOELECTRIC GENERATOR OF OUT-OF-PLANE HEAT FLUX CONFIGURATION
Abstract
Disclosed are two geometrically identical integrated Z-device structures, integrated in two distinct silicon dices, joined together in a face-to-face configuration, such that a p-doped thin film leg of one structure faces toward a n-doped thin film leg of the other structure and vice versa. Upon joining the Z-device structures together, the hill-top metal contacts of one integrated structure are bonded in electrical and thermal continuity with correspondent hill-top metal contacts of the other integrated structure, forming a substantially bivalve TEG of increased power yield for the same footprint area and having an enhanced conversion efficiency. Thermo-electrically generated current may be gathered from one or several end pad pairs, the pads of which are connected to respective valley bottom contacts, on one and on the other of the two dices of the bivalve device, at the ends of conductive lines of micro cells respectively belonging to one and to the other of the two coupled dices.
Classe Tecnologica
H - Electricity
Patent Office
European Patent Office
Numero Deposito
EP 3201955
Anno Deposito
2015
Anno Concessione
2017
Inventori Pugliesi
- Gammariello Giuseppe
Tutti gli inventori
- Mascolo Danilo
- Buosciolo Antonietta
- Gison Italo
- Gammariello Giuseppe
Titolari pugliesi
- Non ci sono titolari pugliesi
Tutti i titolari
- Consorzio Delta Ti Research
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